c opyright ruichip s semiconductor co . , ltd rev . a C jun ., 201 2 www. ruichips .com ru 3029 1 r n - channel a dvanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t c =25 c unless otherwise noted) v dss drain - source voltage 30 v v gss gate - source voltage 2 0 t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diod e continuous forward current t c =25 c 2 9 0 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 116 0 a i d continuous drain current ( v gs =10v) t c =25 c 2 9 0 a t c =100 c 1 9 4 p d maximum power dissipation t c =25 c 375 w t c = 100 c 1 88 w r q jc thermal resistance - junction to case 0. 4 c /w drain - source avalanche ratings e as avalanche energy, single pulsed 306 m j ? 3 0 v/ 2 9 0 a, r ds ( on ) = 1.8 m ( t y p .)@ v gs =10v r ds ( on ) = 2.6 m ( t y p .)@ v gs = 4.5 v ? super high dense cell design ? ultra low on - resistance ? 100% avalanche tested ? lead free and green devices available ( rohs compliant) ? dc - dc converters and off - line ups ? switching applications absolute maximum ratings n - channel mosfe t to - 220
c opyright ruichips semiconductor co . , ltd rev . a C jun ., 201 2 2 www. ruichips .com ru 3029 1 r electrical characteristics ( t c =25 c unless otherwise noted) symbol parameter test condition ru 3029 1 r unit min. typ. max. static characteristics bv dss drain - s ource breakdown voltage v gs =0v, i ds =250 m a 3 0 v i dss zero gate voltage drain current v ds = 3 0 v, v gs =0v 1 m a t j =85 c 3 0 v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 1 3 v i gss gate leakage current v gs = 2 0 v, v ds =0v 10 0 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 75 a 1.8 2.5 m w v gs = 4.5 v, i ds = 50 a 2.6 4. 5 m w notes : calculated continuous current based on maximum allowable junction temperature . package limitation current is 75a . pulse width limited by safe operating area. limited by t jmax , i as = 35 a, v dd = 24 v, r g = 50 , starting t j = 25c . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 7 5 a, v gs =0v 1. 2 v t rr reverse recovery time i sd = 7 5 a, dl sd /dt=100a/ m s 56 ns q rr reverse recover y charge 102 nc dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1. 5 w c iss input capacitance v gs =0v, v ds = 15 v, frequency=1.0mhz 49 0 0 pf c oss output capacitance 1 0 1 0 c rss reverse transfer capacitance 2 1 0 t d ( on ) turn - on d elay time v dd = 15 v, r l = 0.2 w i ds = 7 5 a, v gen =10v, r g = 2.5 w 20 ns t r turn - on rise time 9 8 t d ( off ) turn - off delay time 105 t f turn - off fall time 52 gate charge characteristics q g total gate charge v ds = 24 v, v gs =10v, i ds = 7 5 a 9 0 nc q gs gate - so urce charge 26 q gd gate - drain charge 3 0
c opyright ruichips semiconductor co . , ltd rev . a C jun ., 201 2 3 www. ruichips .com ru 3029 1 r typical characteristics power dissipation drain current p tot - power ( w) i d - dr ain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C jun ., 201 2 4 www. ruichips .com ru 3029 1 r typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current ( a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C jun ., 201 2 5 www. ruichips .com ru 3029 1 r typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junctio n temperature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C jun ., 201 2 6 www. ruichips .com ru 3029 1 r avalanche test circu it and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C jun ., 201 2 7 www. ruichips .com ru 3029 1 r ordering and marking information device marking package packaging quantity reel size tape width ru 3029 1 r ru 3029 1 r to - 220 tube 50 - -
c opyright ruichips semiconductor co . , ltd rev . a C jun ., 201 2 8 www. ruichips .com ru 3029 1 r package information to - 220fb - 3l all dimensions refer to jedec standard do not include mold flash or protrusions symbol mm inch symbol mm inch min nom max min nom max min nom max min nom max a 4.40 4.57 4.70 0.173 0.180 0.185 ?p1 1.40 1.50 1.60 0.055 0.059 0.063 a1 1.27 1.30 1.33 0 .050 0.051 0.052 e 2.54bsc 0.1bsc a2 2.35 2.40 2.50 0.093 0.094 0.098 e1 5.08bsc 0.2bsc b 0.77 - 0.90 0.030 - 0.035 h1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.23 - 1.36 0.048 - 0.054 l 12.75 - 13.17 0.502 - 0.519 c 0.48 0.50 0.52 0.019 0.020 0.021 l1 - - 3.95 - - 0.156 d 15.40 15.60 15.80 0.606 0.614 0.622 l2 2.50ref . 0.098ref . d1 9.00 9.10 9.20 0.354 0.358 0.362 ?p 3.57 3.60 3.63 0.141 0.142 0.143 dep 0.05 0.10 0.20 0.002 0.004 0.008 q 2.73 2.80 2.87 0.107 0.110 0.113 e 9.70 9.90 10.10 0.382 0.389 0. 398 1 5 7 9 5 7 9 e 1 - 8.70 - - 0.343 - 2 1 3 5 1 3 5 e 2 9.80 10.00 10.20 0.386 0.394 0.401
c opyright ruichips semiconductor co . , ltd rev . a C jun ., 201 2 9 www. ruichips .com ru 3029 1 r customer service worldwide sales and service : sales@ ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : ( 86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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